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Wolfspeed CGH09120F

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

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RoHS
Non-Compliant

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
12:00 AM
Drain to Source Breakdown Voltage
12 A
Drain to Source Voltage (Vdss)
120 V
Efficiency
35%
Gain
35 %
Gate to Source Voltage (Vgs)
-10 V
Max Frequency
2.5 GHz
Max Junction Temperature (Tj)
225 °C
Max Operating Temperature
225 °C
Max Output Power
150 °C
Min Operating Temperature
-40 °C
Number of Channels
-40 °C
Power Dissipation
56 W
Voltage Rating
28 V

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