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Wolfspeed C3M0120090D

Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode

Product Details

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Compliance

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REACH SVHC
No SVHC
RoHS
Non-Compliant

Dimensions

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Height
25.5 mm

Physical

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Case/Package
TO-247-3
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
23 A
Current Rating
23 A
Drain to Source Breakdown Voltage
900 V
Drain to Source Resistance
120 mΩ
Drain to Source Voltage (Vdss)
900 V
Gate to Source Voltage (Vgs)
15 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
97 W
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
97 W
Threshold Voltage
2.1 V
Turn-Off Delay Time
14 ns
Turn-On Delay Time
6 ns

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