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Wolfspeed C3M0065100J

Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode

Product Details

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Compliance

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RoHS
Non-Compliant

Dimensions

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Height
4.82 mm

Physical

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Case/Package
TO-263-7

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
32 A
Current Rating
35 A
Drain to Source Breakdown Voltage
1 kV
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
65 mΩ
Gate to Source Voltage (Vgs)
19 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
-55 °C
Power Dissipation
113.5 W
Turn-Off Delay Time
13 ns
Turn-On Delay Time
7 ns

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