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Wolfspeed C3M0015065K

Silicon Carbide Power 650V MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode

Product Details

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Dimensions

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Height
27.97 mm

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
91 A
Current Rating
120 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
15 mΩ
Drain to Source Voltage (Vdss)
15 mΩ
Gate to Source Voltage (Vgs)
19 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-40 °C
Number of Channels
-40 °C
Power Dissipation
416 W
Turn-Off Delay Time
57 ns
Turn-On Delay Time
23 ns

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