Skip to main content

Toshiba TPN1600ANH,L1Q

X35 Pb-F Power Mosfet Transistor Tson-Adv Moq=3000 Pd=42W F=1Mhz

Product Details

Find similar products  

Compliance

Select to search
related specs
Radiation Hardening
No
RoHS
Compliant

Physical

Select to search
related specs
Mount
Surface Mount
Number of Pins
8

Technical

Select to search
related specs
Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
13 mΩ
Drain to Source Voltage (Vdss)
100 V
Fall Time
6.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.6 nF
Max Operating Temperature
150 °C
Max Power Dissipation
700 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Digi-Reel®
Rds On Max
16 mΩ
Rise Time
5 ns
Turn-Off Delay Time
21 ns
Turn-On Delay Time
14 ns

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us