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Toshiba TK55S10N1,LQ

100V 55A 157W 6.5m@10V, 27.5A 4V@500A N Channel TO-252-2(DPAK) MOSFETs ROHS

Product Details

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Compliance

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RoHS
6.5 mΩ

Physical

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Case/Package
TO-252-3
Mount
-55 °C
Weight
Compliant

Technical

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related specs
Continuous Drain Current (ID)
55 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
5.5 mΩ
Drain to Source Voltage (Vdss)
5.5 mΩ
Element Configuration
Single
Fall Time
19 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.28 nF
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Rds On Max
6.5 mΩ
Rise Time
11 ns
Turn-Off Delay Time
51 ns
Turn-On Delay Time
11 ns

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