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Toshiba GT20J321

Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220NIS

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Physical

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Mount
Through Hole
Number of Pins
3

Technical

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Collector Emitter Breakdown Voltage
600 V
Collector Emitter Saturation Voltage
2.45 V
Collector Emitter Voltage (VCEO)
600 V
Element Configuration
Single
Max Collector Current
20 A
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Power Dissipation
45 W
Rise Time
40 ns

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