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Toshiba 2SA1943N(S1,E,S)

Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon

Product Details

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Compliance

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RoHS
Compliant

Physical

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Mount
Through Hole
Weight
6.961991 g

Technical

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Collector Base Voltage (VCBO)
-230 V
Collector Emitter Breakdown Voltage
230 V
Collector Emitter Saturation Voltage
-1.1 V
Collector Emitter Voltage (VCEO)
3 V
Continuous Collector Current
-15 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Gain Bandwidth Product
30 MHz
hFE Min
35
Max Collector Current
15 A
Max Operating Temperature
150 °C
Max Power Dissipation
150 W
Min Operating Temperature
-55 °C
Polarity
PNP
Transition Frequency
30 MHz

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