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Taiwan Semiconductor SMBJ6V0A
Product Details
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Breakdown Voltage
7 V
Clamping Voltage
10.3 V
Forward Voltage
1 V
Max Breakdown Voltage
7.37 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
800 µA
Min Breakdown Voltage
6.67 V
Peak Pulse Current
58.3 A
Power Dissipation
200 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
6 V