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Taiwan Semiconductor P6SMB30A
Product Details
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Breakdown Voltage
30 V
Clamping Voltage
41.4 V
Forward Voltage
1 V
Max Breakdown Voltage
31.5 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Min Breakdown Voltage
28.5 V
Peak Pulse Current
15 A
Power Dissipation
200 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
25.6 V