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Taiwan Semiconductor BZD27C82P
Product Details
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Breakdown Voltage
51 V
Clamping Voltage
70.1 V
Forward Voltage
1 V
Max Breakdown Voltage
53.6 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
175 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Min Breakdown Voltage
48.5 V
Peak Pulse Current
21.4 A
Power Dissipation
1 W
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
43.6 V
Test Current
10 mA
Zener Voltage
82 V