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STMicroelectronics E53NA50

N Channel Enhancement Mode Fast Power Mos Transistor

Product Details

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Compliance

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RoHS
Non-Compliant

Dimensions

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Height
12.2 mm

Technical

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Continuous Drain Current (ID)
53 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
75 mΩ
Drain to Source Voltage (Vdss)
75 mΩ
Gate to Source Voltage (Vgs)
30 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Number of Channels
150 °C
Power Dissipation
460 W
Turn-Off Delay Time
105 ns
Turn-On Delay Time
57 ns

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