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STMicroelectronics BUL1203E

Bipolar (BJT) Transistor NPN 55 V 5 A - 1 W Through Hole TO-22AB

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
TO-220
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Technical

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Collector Base Voltage (VCBO)
1.2 kV
Collector Emitter Breakdown Voltage
550 V
Collector Emitter Voltage (VCEO)
550 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
9 V
hFE Min
10
Max Collector Current
5 A
Max Operating Temperature
150 °C
Max Power Dissipation
100 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
100 W

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