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STMicroelectronics BD682

Bipolar (BJT) Transistor PNP - Darlington 100 V 4 A - 40 W Through Hole SOT-32-3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
10.8 mm
Length
7.8 mm
Width
2.7 mm

Physical

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Case/Package
SOT-32
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
100 V
Continuous Collector Current
4 A
Current Rating
-4 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
750
Max Breakdown Voltage
100 V
Max Collector Current
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
40 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
PNP
Power Dissipation
40 W
Voltage Rating (DC)
-100 V

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