Skip to main content

STMicroelectronics BD138

STMICROELECTRONICS BD138 Bipolar (BJT) Single Transistor, PNP, 60 V, 1.25 W, -1.5 A, 250 hFE

Product Details

Find similar products  

Compliance

Select to search
related specs
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
10.8 mm
Length
7.8 mm
Width
2.7 mm

Physical

Select to search
related specs
Case/Package
SOT-32
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
4.535924 g

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
60 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
25
Max Collector Current
1.5 A
Max Operating Temperature
150 °C
Max Power Dissipation
1.25 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
PNP
Power Dissipation
1.25 W

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us