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Semelab BUZ906

8A I(D) 200V 1-Element P-Channel Silicon Metal-oxide Semiconductor FET TO-3

Product Details

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Compliance

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REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Case/Package
TO-3
Number of Pins
2

Technical

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Continuous Drain Current (ID)
8 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
1.5 Ω
Drain to Source Voltage (Vdss)
-200 V
Max Operating Temperature
150 °C
Max Power Dissipation
125 W
Nominal Vgs
-1.5 V
Power Dissipation
125 W
Threshold Voltage
-1.5 V

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