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ROHM RGT30NS65DGTL

Trans IGBT Chip N-CH 650V 30A 133000mW 3-Pin(2+Tab) LPDS T/R

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
5 mm

Physical

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Case/Package
TO-263-3
Mount
-40 °C
Number of Pins
3
Weight
1.946308 g

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Breakdown Voltage
650 V
Collector Emitter Saturation Voltage
1.65 V
Collector Emitter Voltage (VCEO)
650 V
Continuous Collector Current
15 A
Element Configuration
30 A
Max Breakdown Voltage
650 V
Max Collector Current
30 A
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-40 °C
Packaging
Tape & Reel (TR)
Power Dissipation
133 W
Reverse Recovery Time
55 ns
Turn-Off Delay Time
64 ns
Turn-On Delay Time
18 ns

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