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ROHM 2SD2656T106

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
900 µm
Length
2.1 mm
Width
IBS

Physical

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Case/Package
SC
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
140 mV
Collector Emitter Voltage (VCEO)
30 V
Continuous Collector Current
1:00 AM
Current Rating
1 A
Element Configuration
1 A
Emitter Base Voltage (VEBO)
6 V
Gain Bandwidth Product
400 MHz
hFE Min
900 µm
Max Breakdown Voltage
30 V
Max Collector Current
1 A
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Polarity
NPN
Transition Frequency
400 MHz
Voltage Rating (DC)
30 V

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