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ROHM 2SCR523MT2L

Bipolar Transistors - BJT NPN General Purpose Amplification Transistor

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
550 µm

Physical

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Case/Package
SOT-723
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
100 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Gain Bandwidth Product
350 MHz
hFE Min
550 µm
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
NPN
Power Dissipation
150 mW
Transition Frequency
350 MHz

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