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onsemi FJP13007H2TU

Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3
Weight
1.8 g

Supply Chain

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Lifecycle Status
EOL

Technical

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Collector Base Voltage (VCBO)
700 V
Collector Emitter Breakdown Voltage
400 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
400 V
Current Rating
8:00 AM
Element Configuration
Single
Emitter Base Voltage (VEBO)
9 V
Frequency
4 MHz
Gain Bandwidth Product
4 MHz
hFE Min
5
Max Collector Current
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
-65 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
80 W
Transition Frequency
4 MHz
Voltage Rating (DC)
400 V

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