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onsemi FJE5304DTU

Bipolar (BJT) Transistor NPN 400 V 4 A - 30 W Through Hole TO-126-3

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
14.2 mm

Physical

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Case/Package
TO-126
Mount
Through Hole
Number of Pins
3
Weight
761 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
700 V
Collector Emitter Breakdown Voltage
400 V
Collector Emitter Saturation Voltage
1.5 V
Collector Emitter Voltage (VCEO)
400 V
Current Rating
4:00 AM
Element Configuration
4 A
Emitter Base Voltage (VEBO)
12 V
hFE Min
8
Max Collector Current
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
30 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
30 W
Voltage Rating (DC)
400 V

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