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onsemi FDT459N

N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
35 mΩ

Dimensions

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Height
1.7 mm
Length
6.7 mm
Width
3.7 mm

Physical

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Case/Package
SOT-223
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
6.5 A
Current Rating
6.5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
35 mΩ
Drain to Source Voltage (Vdss)
35 mΩ
Element Configuration
Single
Fall Time
16 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
365 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
3 W
Rds On Max
35 mΩ
Rise Time
8.2 ns
Turn-Off Delay Time
6 ns
Turn-On Delay Time
Compliant
Voltage Rating (DC)
30 V

Compliance Documents

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