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onsemi FDS8958A-F085

Dual Mosfet, N And P Channel, 7 A, 30 V, 0.019 Ohm, 10 V, 1.9 V

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.75 mm

Physical

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Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
230.4 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
42 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Dual
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
575 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
900 mW
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
2 W
Rds On Max
28 mΩ
Threshold Voltage
1.9 V

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