onsemi FDS6673BZ
Product Details
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Compliance
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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
Dimensions
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Height
1.75 mm
Length
5 mm
Width
4 mm
Physical
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Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
130 mg
Supply Chain
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Lifecycle Status
Production
Technical
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Continuous Drain Current (ID)
-14.5 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
6.5 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
105 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
4.7 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.9 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
7.8 mΩ
Resistance
7.8 MΩ
Rise Time
16 ns
Threshold Voltage
-1.9 V
Turn-Off Delay Time
225 ns
Turn-On Delay Time
14 ns