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onsemi FDMS86200DC

N-Channel Shielded Gate PowerTrench MOSFET, Dual CoolTM 56, 150V, 40A, 17m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
17 mΩ

Dimensions

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Height
1 mm
Length
5.1 mm
Width
IBS

Physical

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Mount
-55 °C
Number of Pins
8
Weight
90 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
9.3 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
14 mΩ
Drain to Source Voltage (Vdss)
14 mΩ
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.05 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
3.2 W
Rds On Max
17 mΩ
Rise Time
4 ns
Turn-Off Delay Time
23 ns
Turn-On Delay Time
Compliant

Compliance Documents

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