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onsemi FDMC86324

N-Channel Power Trench MOSFET 80V, 20A, 23m

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.15 mm
Length
3.3 mm
Width
3.3 mm

Physical

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Case/Package
QFN EP
Mount
Surface Mount
Number of Pins
8
Weight
32.13 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
7 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
19.1 mΩ
Drain to Source Voltage (Vdss)
80 V
Element Configuration
Single
Fall Time
4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
965 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
41 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.3 W
Rds On Max
23 mΩ
Rise Time
4 ns
Threshold Voltage
3.1 V
Turn-Off Delay Time
14 ns
Turn-On Delay Time
8 ns

Compliance Documents

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