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onsemi FDMC86184

N-Channel Shielded Gate PowerTrench MOSFET 100V 53A 8.5mOhm 8-Pin PQFN T/R

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
800 µm

Physical

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Mount
Surface Mount
Weight
152.7 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
12 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
6.4 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
2.3 W
Turn-Off Delay Time
17 ns
Turn-On Delay Time
12 ns

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