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onsemi FDMC86102LZ

N-Channel Shielded Gate Power Trench MOSFET 100V, 22A, 24m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
24 MΩ

Dimensions

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Height
750 µm
Length
3.3 mm
Width
IBS

Physical

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Case/Package
TO-220-3
Contact Plating
Gold, Silver
Mount
-55 °C
Number of Pins
8
Weight
165.33333 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
7:00 AM
Drain to Source Breakdown Voltage
7 A
Drain to Source Resistance
19 mΩ
Drain to Source Voltage (Vdss)
19 mΩ
Element Configuration
Single
Fall Time
2.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
1.6 V
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2.3 W
Rds On Max
24 mΩ
Resistance
24 MΩ
Rise Time
24 mΩ
Turn-Off Delay Time
2.3 ns
Turn-On Delay Time
Compliant

Compliance Documents

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