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onsemi FDMC6675BZ

P-Channel Power Trench MOSFET -30V, -20A, 14.4m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
800 µm
Length
3.3 mm
Width
3.3 mm

Physical

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Mount
Surface Mount
Number of Pins
8
Weight
200 mg

Supply Chain

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Lifecycle Status
NRND

Technical

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Continuous Drain Current (ID)
-20 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
10.7 mΩ
Drain to Source Voltage (Vdss)
-30 V
Element Configuration
Single
Fall Time
26 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
2.865 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
36 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
36 W
Rds On Max
14.4 mΩ
Resistance
14.4 MΩ
Rise Time
10 ns
Threshold Voltage
-1.9 V
Turn-Off Delay Time
44 ns
Turn-On Delay Time
11 ns

Compliance Documents

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