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onsemi FDMC3612

N-Channel Power Trench MOSFET 100V, 12A, 110m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
800 µm
Length
3.3 mm
Width
3.3 mm

Physical

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Contact Plating
Gold
Mount
Surface Mount
Number of Pins
8
Weight
180 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
3.3 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
92 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
880 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
35 W
Min Operating Temperature
-55 °C
Nominal Vgs
2.5 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2.3 W
Rds On Max
110 mΩ
Rise Time
2.8 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
19 ns
Turn-On Delay Time
7.4 ns

Compliance Documents

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