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onsemi FDI150N10

PowerTrench MOSFET, N-Channel, 100V, 57A, 16m

Product Details

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Compliance

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Radiation Hardening
No
RoHS
16 mΩ

Physical

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Case/Package
TO-262
Mount
-55 °C
Weight
Compliant

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
57 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
12 mΩ
Drain to Source Voltage (Vdss)
12 mΩ
Element Configuration
Single
Fall Time
83 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.76 nF
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
110 W
Rds On Max
16 mΩ
Rise Time
164 ns
Turn-Off Delay Time
86 ns
Turn-On Delay Time
47 ns

Compliance Documents

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