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onsemi FDG311N

N-Channel PowerTrench MOSFET, 2.5V Specified, 1.9 A, 115 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.1 mm
Length
2 mm
Width
1.25 mm

Physical

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Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
28 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
1.9 A
Current Rating
1.9 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
115 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
270 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
750 mW
Min Operating Temperature
-55 °C
Nominal Vgs
900 mV
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
750 mW
Rds On Max
115 mΩ
Rise Time
9 ns
Threshold Voltage
900 mV
Turn-Off Delay Time
10 ns
Turn-On Delay Time
5 ns
Voltage Rating (DC)
20 V

Compliance Documents

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