Skip to main content

onsemi FDD8876

Transistor, mosfet, n-Channel, 30V V(Br)Dss, 15A I(D), to-252Aa Rohs Compliant: Yes

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Select to search
related specs
Height
2.517 mm

Physical

Select to search
related specs
Case/Package
TO-252-3
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Select to search
related specs
Lifecycle Status
EOL

Technical

Select to search
related specs
Continuous Drain Current (ID)
15 A
Current Rating
73 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
6.6 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
37 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.7 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
70 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
70 W
Rds On Max
8.2 mΩ
Rise Time
91 ns
Turn-Off Delay Time
44 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
30 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us