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onsemi FDD86250

Shielded Gate PowerTrench MOSFET, N-Channel, 150 V, 51 A, 22 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
2.517 mm
Length
6.73 mm
Width
6.22 mm

Physical

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Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
8 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
18.4 mΩ
Drain to Source Voltage (Vdss)
150 V
Element Configuration
Single
Fall Time
4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.11 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
132 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
3.1 W
Rds On Max
22 mΩ
Resistance
45 MΩ
Rise Time
3.7 ns
Threshold Voltage
2.9 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
11.2 ns

Compliance Documents

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