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onsemi FDD4N60NZ

N-Channel Power MOSFET, UniFETTM II, 600 V, 3.4 A, 2.5 , DPAK

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
2.5 Ω

Dimensions

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Height
2.39 mm
Length
6.73 mm
Width
IBS

Physical

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Case/Package
DPAK
Mount
-55 °C
Number of Pins
3
Weight
Compliant

Supply Chain

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Lifecycle Status
EOL

Technical

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Continuous Drain Current (ID)
3.4 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
1.9 Ω
Drain to Source Voltage (Vdss)
1.9 Ω
Element Configuration
Single
Fall Time
12.8 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
2.517 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
114 W
Rds On Max
2.5 Ω
Rise Time
15.1 ns
Turn-Off Delay Time
30.2 ns
Turn-On Delay Time
12.7 ns

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