Skip to main content

onsemi FDD3860

In a Pack of 5, FDD3860 N-Channel MOSFET, 29 A, 100 V PowerTrench, 3-Pin DPAK ON Semiconductor

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
2.517 mm
Length
6.73 mm
Width
6.22 mm

Physical

Select to search
related specs
Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
6.2 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
29 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
7 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.74 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
3.1 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
3.75 W
Rds On Max
36 mΩ
Resistance
36 MΩ
Rise Time
10 ns
Threshold Voltage
3.8 V
Turn-Off Delay Time
24 ns
Turn-On Delay Time
16 ns

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us