Name: FDD10N20LZTM
Availability: OutOfStock

Continuous Drain Current (ID)

7.6 A

Drain to Source Breakdown Voltage

200 V

Drain to Source Resistance

300 mΩ

Drain to Source Voltage (Vdss)

200 V

Element Configuration

Single

Fall Time

25 ns

Gate to Source Voltage (Vgs)

20 V

Input Capacitance

585 pF

Max Junction Temperature (Tj)

150 °C

Max Operating Temperature

150 °C

Max Power Dissipation

56 W

Min Operating Temperature

-55 °C

Number of Channels

1

Number of Elements

1

Power Dissipation

83 W

Rds On Max

360 mΩ

Rise Time

15 ns

Turn-Off Delay Time

55 ns

Turn-On Delay Time

10 ns

onsemi FDD10N20LZTM

Product Details