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onsemi FDC6392S

P-Channel PowerTrench MOSFET and Integrated Schottky Diode 20V -2.2A, 150m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
150 mΩ

Physical

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Case/Package
SOT-23-6
Mount
-55 °C
Number of Pins
6
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
2.2 A
Current Rating
-2.2 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
150 mΩ
Drain to Source Voltage (Vdss)
150 mΩ
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
369 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
960 mW
Rds On Max
150 mΩ
Rise Time
11 ns
Turn-Off Delay Time
13 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
Compliant

Compliance Documents

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