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onsemi FDC3535

P-Channel Power Trench MOSFET, -80 V, -2.1 A, 183 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.1 mm
Length
3 mm
Width
1.7 mm

Physical

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Case/Package
SOT-23-6
Mount
Surface Mount
Number of Pins
6
Weight
36 mg

Supply Chain

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Lifecycle Status
EOL

Technical

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Continuous Drain Current (ID)
-2.1 A
Drain to Source Breakdown Voltage
-80 V
Drain to Source Resistance
147 mΩ
Drain to Source Voltage (Vdss)
-80 V
Element Configuration
Single
Fall Time
2.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
880 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Nominal Vgs
-1.6 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
1.6 W
Rds On Max
183 mΩ
Rise Time
3.1 ns
Threshold Voltage
-1.6 V
Turn-Off Delay Time
23 ns
Turn-On Delay Time
6.5 ns

Compliance Documents

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