Skip to main content

onsemi FCPF850N80Z

N-Channel Power MOSFET, SUPERFET II, 800 V, 6 A, 850 m, TO-220F

Product Details

Find similar products  

Compliance

Select to search
related specs
RoHS
850 mΩ

Dimensions

Select to search
related specs
Height
16.07 mm
Length
10.36 mm
Width
IBS

Physical

Select to search
related specs
Case/Package
TO-220-3
Mount
-55 °C
Number of Pins
3
Weight
Compliant

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
6:00 AM
Drain to Source Breakdown Voltage
8 A
Drain to Source Resistance
710 mΩ
Drain to Source Voltage (Vdss)
710 mΩ
Element Configuration
Single
Fall Time
4.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
19.5 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
28.4 W
Rds On Max
850 mΩ
Rise Time
10 ns
Turn-Off Delay Time
40 ns
Turn-On Delay Time
16 ns

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us