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onsemi FCPF650N80Z

N-Channel Power MOSFET, SUPERFET II, 800 V, 10 A, 650 m, TO-220F

Product Details

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Compliance

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RoHS
650 mΩ

Dimensions

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Height
16.07 mm
Length
10.36 mm
Width
IBS

Physical

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Case/Package
TO-220-3
Mount
-55 °C
Number of Pins
3
Weight
2.27 g

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
8:00 AM
Drain to Source Resistance
8 A
Drain to Source Voltage (Vdss)
650 mΩ
Element Configuration
Single
Fall Time
3.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.565 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Rds On Max
650 mΩ
Rise Time
11 ns
Turn-Off Delay Time
40 ns
Turn-On Delay Time
Compliant

Compliance Documents

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