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onsemi FCPF190N60E

N-Channel Power MOSFET, SUPERFET II, Easy Drive, 600 V, 20.6 A, 190 m, TO-220F

Product Details

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Compliance

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Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
190 mΩ

Dimensions

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Height
9.19 mm
Length
10.36 mm
Width
4.9 mm

Physical

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Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3
Weight
2.27 g

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
20.6 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
190 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
40 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.175 nF
Max Operating Temperature
150 °C
Max Power Dissipation
39 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
39 W
Rds On Max
190 mΩ
Rise Time
38 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
IBS

Compliance Documents

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