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onsemi FCH060N80-F155

N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247

Product Details

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Compliance

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REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
24.75 mm

Physical

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Case/Package
TO-247-3
Mount
Through Hole
Number of Pins
3
Weight
6.39 g

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
56 A
Drain to Source Breakdown Voltage
800 V
Drain to Source Resistance
54 mΩ
Drain to Source Voltage (Vdss)
800 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
14.685 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 W
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
500 W
Rds On Max
60 mΩ
Threshold Voltage
4.5 V
Turn-Off Delay Time
213 ns
Turn-On Delay Time
55 ns

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