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onsemi EFC8811R-TF

Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
220 µm

Physical

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Case/Package
SMD/SMT
Mount
Surface Mount

Supply Chain

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Lifecycle Status
EOL

Technical

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Drain to Source Resistance
2.3 mΩ
Gate to Source Voltage (Vgs)
8 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Number of Channels
2
Power Dissipation
2.5 W
Turn-Off Delay Time
38 µs
Turn-On Delay Time
80 ns

Compliance Documents

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