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onsemi BD682STU

4.0 A, 100 V PNP Darlington Bipolar Power Transistor

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
11 mm
Length
8 mm
Width
IBS

Physical

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Case/Package
TO-126
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
761 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
-100 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
-2.5 V
Collector Emitter Voltage (VCEO)
-100 V
Continuous Collector Current
-4 A
Current Rating
-4 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
hFE Min
14.2 mm
Max Breakdown Voltage
100 V
Max Collector Current
-4 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
14 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
14 W
Voltage Rating (DC)
-100 V

Compliance Documents

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