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onsemi 2SC5551AE-TD-E

RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
1.6 mm

Physical

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Number of Pins
3

Supply Chain

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Lifecycle Status
EOL

Technical

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Collector Base Voltage (VCBO)
40 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
70 mV
Collector Emitter Voltage (VCEO)
30 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
2 V
Frequency
3.5 GHz
Gain Bandwidth Product
3.5 GHz
hFE Min
90
Max Collector Current
300 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.3 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
Tape and Reel
Power Dissipation
1.3 W
Transition Frequency
3.5 GHz

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