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onsemi 2N5551BU

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
5.33 mm
Length
5.2 mm
Width
4.19 mm

Physical

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Case/Package
TO-92-3
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
160 V
Collector Emitter Saturation Voltage
150 mV
Collector Emitter Voltage (VCEO)
160 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
100 MHz
hFE Min
80
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
625 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
160 V

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