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NXP Semiconductors BFU760F,115

RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Silicon Germanium, NPN

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
SOT-343
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4

Technical

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Collector Base Voltage (VCBO)
10 V
Collector Emitter Breakdown Voltage
2.8 V
Collector Emitter Voltage (VCEO)
2.8 V
Continuous Collector Current
70 mA
Emitter Base Voltage (VEBO)
1 V
Frequency
45 GHz
Gain
25.5 dB
hFE Min
155
Max Breakdown Voltage
2.8 V
Max Collector Current
70 mA
Max Operating Temperature
150 °C
Max Power Dissipation
220 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Output Power
220 mW
Packaging
Digi-Reel®
Polarity
Digi-Reel®
Power Dissipation
220 mW
Transition Frequency
45 GHz

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