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NXP Semiconductors BFU730F,115
Product Details
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Compliance
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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant
Dimensions
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Height
750 µm
Length
2.2 mm
Width
1.35 mm
Physical
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Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4
Technical
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Collector Base Voltage (VCBO)
10 V
Collector Emitter Breakdown Voltage
2.8 V
Collector Emitter Voltage (VCEO)
2.8 V
Continuous Collector Current
5 mA
Emitter Base Voltage (VEBO)
1 V
Frequency
55 GHz
Gain
12.5 dB
hFE Min
750 µm
Max Breakdown Voltage
2.8 V
Max Collector Current
30 mA
Max Operating Temperature
150 °C
Max Power Dissipation
197 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Output Power
197 mW
Packaging
Digi-Reel®
Polarity
Digi-Reel®
Power Dissipation
197 mW
Transition Frequency
55 GHz