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NXP Semiconductors BC847AT,115

Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
Max Breakdown Voltage
45 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Digi-Reel®
Polarity
NPN
Power Dissipation
150 mW
Transition Frequency
100 MHz

Compliance Documents

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